CD914, CD3600, CD4148, CD4150, CD4153,
CD4454, CD4531, CD6640, CD6642
Silicon Switching Diode Chips
Rev. V2
Features
All Junctions Completely Protected with Silicon
Dioxide
Description
These silicon switching diode chips are compatible
with all wire bonding and die attach techniques with
the exception of solder reflow.
Available in JANHC and JANKC per:
CD914, CD4148 & CD4531: MIL-PRF-19500/116
CD4153: MIL-PRF-19500/133
CD6642: MIL-PRF-19500/578
CD6640: MIL-PRF-19500/609
Electrical Specifications: TA = +25°C (unless otherwise specified)
Parameter
Test Conditions
Units
CD914
CD4148
CD4531
Breakdown Voltage
@ 100 mA
Volts (min) 100
100
VRWM
—
Volts (pk)
75
75
IO
—
mA 200
200
Forward Voltage1
Forward Voltage2
Forward Voltage3
IF = 10 mA
IF = 50 mA
IF = 100 mA
Vdc 0.8
Vdc 1.2
Vdc N/A
0.8
N/A
1.2
Trr
—
nsec
5
5
Reverse Current1
@ 20 Vdc
nA 25
25
Reverse Current2
— µA @ V 0.5 @ 75 0.5 @ 75
Reverse Current3
20 Vdc, TA = +150°C
µA
35
35
Reverse Current4
Capacitance
TA = +150°C
@0V
µA @ V
pF
75 @ 75
4
75 @ 75
4
Capacitance
@1.5 V
pF 2.8
2.8
CD6642
100
75
300
0.8
N/A
1.2
5
25
0.5 @ 75
50
100 @ 75
5
2.8
CD4454
75
50
200
1
N/A
N/A
4
N/A
0.1 @ 50
N/A
100 @ 50
2
N/A
Parameter
Test Conditions
Units
CD3600
CD4150
CD6640
CD4153
Breakdown Voltage
IR = 10 mA1
Volts (min)
75
75
75 1001
VRWM
—
Volts (pk)
50
50
50
75
Reverse Current1
VR = 50 Vdc
µA Vdc
0.1
0.1
0.1 0.05
Reverse Current2
VR = 50 Vdc TA = +150°C µA Vdc
100
100
90
Capacitance
VR = 0; f = 1 MHz;
ac signals = 50 mV (p-p)
pF
2.5
2.5
2.5
Trr
µA
nsec
4
4
4
50
2
4
1. @ 5 µA for CD4153
1 * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
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DC-0011501