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2N5151 - NPN Power Silicon Transistor

Download the 2N5151 datasheet PDF. This datasheet also covers the 2N5151-MA variant, as both devices belong to the same npn power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF19500/545.
  • TO-5 Package: 2N5151L, 2N5153L.
  • TO-39 (TO-205AD) Package: 2N5151, 2N5153 Rev. V1 Electrical Characteristics Parameter Test Conditions Symbol Units Min. Max. Off Characteristics Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current IC = 100 mAdc, IB = 0 VEB = 4.0 Vdc, IC = 0 VEB = 5.5 Vdc, IC =.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N5151-MA-COM.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N5151, 2N5151L, 2N5153, 2N5153L NPN Power Silicon Transistor Features  Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF19500/545  TO-5 Package: 2N5151L, 2N5153L  TO-39 (TO-205AD) Package: 2N5151, 2N5153 Rev. V1 Electrical Characteristics Parameter Test Conditions Symbol Units Min. Max. Off Characteristics Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current IC = 100 mAdc, IB = 0 VEB = 4.0 Vdc, IC = 0 VEB = 5.5 Vdc, IC = 0 VCE = 60 Vdc, VBE = 0 VCE = 100 Vdc, VBE = 0 VCE = 40 Vdc, IB = 0 V(BR)CEO Vdc IEBO µAdc mAdc ICES µAdc mAdc ICEO µAdc 80 — — — — 1.0 1.0 1.0 1.0 50 On Characteristics Forward Current Transfer Ratio IC = 50 mAdc, VCE = 5.
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