Description
The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology..
Features
- JEDEC standard 3.3V power supply.
- LVTTL compatible with multiplexed address.
- Four-banks operation.
- MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
- All inputs are sampled at the positive going edge of the system clock.
- Burst read single-bit write operation.
- DQM for masking.
- Auto & self refresh.
- 64ms refresh period (4K cycle.
