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TBS6416B4E - 1M x 16 Bit x 4 Bank Synchronous DRAM

Download the TBS6416B4E datasheet PDF. This datasheet also covers the TBS6416B4E_M variant, as both devices belong to the same 1m x 16 bit x 4 bank synchronous dram family and are provided as variant models within a single manufacturer datasheet.

General Description

The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology.

Key Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four-banks operation.
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • DQM for masking.
  • Auto & self refresh.
  • 64ms refresh period (4K cycle.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TBS6416B4E_M-tec.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TBS6416B4E
Manufacturer M-tec
File Size 111.94 KB
Description 1M x 16 Bit x 4 Bank Synchronous DRAM
Datasheet download datasheet TBS6416B4E Datasheet

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Other Datasheets by M-tec

Part Number Description
TBS6416B4E 1M x 16-Bit x 4-Banks SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
M.tec 1M x 16Bit x 4 Banks synchronous DRAM TBS6416B4E GENERAL DESCRIPTION The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. FEATURES • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four-banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -.