LPM4953 mosfet equivalent, dual p -channel enhancement power mosfet.
* Trench Technology
* PMOS: VDS=-15V
RDS(ON) < 65mΩ, ID=3.6A @ VGS=-4.5V RDS(ON) < 42mΩ, ID=5A @ VGS=-10V
* Super high density cell design
* Extremely Low.
* Driver for Relay, Solenoid, Motor, LED etc.
* DC-DC converter circuit
* Power Switch
* Load Switch
The LPM4953 integrates two P-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circ.
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