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LPM2302 - N-Channel Enhancement Mode Field Effect Transistor

General Description

The LPM2302 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • 20V/3.5A, RDS(ON)=50mΩ(Typ. )@VGS=4.5V.
  • 20V/3.0A, RDS(ON)=75mΩ(Typ. )@VGS=2.5V.
  • Super high density cell design for extremely low RDS(ON).
  • SOT23 Package.

📥 Download Datasheet

Datasheet Details

Part number LPM2302
Manufacturer Low Power Semi
File Size 221.00 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet LPM2302 Datasheet

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Full PDF Text Transcription (Reference)

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Preliminary Datasheet LPM2302 LPM2302 20V/3.5A N-Channel Enhancement Mode Field Effect Transistor General Description The LPM2302 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for low voltage applications, notebook computer power management and other battery powered circuits where high-side switching are needed. Ordering Information LPM2302- □ □ □ F: Pb-Free Package Type B3: SOT23-3 Features ■ 20V/3.5A, RDS(ON)=50mΩ(Typ.)@VGS=4.5V ■ 20V/3.0A, RDS(ON)=75mΩ(Typ.)@VGS=2.