LSH07N70 mosfet equivalent, n-channel mosfet.
* Ultra low Rdson
* Ultra low gate charge (typ. Qg = 19nC)
* 100% UIS tested
* RoHS compliant
Applications
* Power faction correction (PFC).
* Swi.
which require superior power density and outstanding efficiency.
Product Summary
VDS @ Tj,max
750V
RDS(on),max
0.57.
LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
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