LSG04N65 datasheet, mosfet equivalent, Lonten

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datasheet Download (Size : 853.30KB)

Features and benefits

* Ultra low RDS(on)
* Ultra low gate charge (typ. Qg = 13nC)
* 100% UIS tested
* RoHS compliant TO-251 TO-252 TO-220 D TO-220F Applications
* Pow.

Application

which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 700V RDS(on),max 0.96.

Description

LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Produ.

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