* Ultra low RDS(on)
* Ultra low gate charge (typ. Qg = 29nC)
* 100% UIS tested
* RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Pa.

which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 750V RDS(on),max 0.37.

LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Produ.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts