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LSC20N60 - N-channel MOSFET

General Description

LonFETTM Power MOSFET is fabricated using advanced super junction technology.

The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.

Key Features

  • Ultra low Rdson.
  • Ultra low gate charge (typ. Qg = 68nC).
  • 100% UIS tested.
  • RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage Avalanche energy, single pulse 2) Avalanche energy, repetitive 1) Avalanche current, repetitive 1) Power Dissipation ( TC = 25°C ) - Derate above 25°C Operating and Storage Temperature Range Conti.

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Datasheet Details

Part number LSC20N60
Manufacturer Lonten
File Size 484.61 KB
Description N-channel MOSFET
Datasheet download datasheet LSC20N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LSC20N60 LonFET Lonten N-channel 600V, 20A, 0.18Ω LonFETTM Power MOSFET Description LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 650V RDS(ON),max 0.18Ω IDM 60A Qg,typ 68nC Features  Ultra low Rdson  Ultra low gate charge (typ.