LSC20N60 Datasheet | Lonten

Description Lon FETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 650V RDS(ON),max 0.18Ω 60A Qg,typ 68n C Features - Ultra low Rdson - Ultra low gate charge (typ. Qg = 68n C) - 100% UIS tested - Ro HS pliant N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage Avalanche energy, single pulse 2) Avalanche energy, repetitive 1) Avalanche current, repetitive 1) Power Dissipation ( TC = 25°C ) - Derate above 25°C Operating and Storage Temperature Range Continuous diode forward current Diode pulse current Symbol VDSS ID IDM VGSS EAS EAR IAR PD TJ, TSTG IS IS,pulse 600 20 13 60 ±30 700 20.5 20 205 1.64 -55 to +150 20 60 Unit V A A A V m J m J A W W/°C °C A A Thermal Characteristics...