LT1N60 Datasheet, Longtium Microelectronics

 High ruggedness  RDS(ON) (Max 9 Ω)@VGS=10V  Gate Charge (Max 6nC)  Improved dv/dt Capability  100% Avalanche Tested General Description  This power MOSFET is produ.

 This power MOSFET is produced with advanced VDMOS technology of LONGTIUMIC.  This technology enable power MOSFET to have better characteristics,  Such as fast switching time, low on resistance, low gate charge and especially excellent avalanche c.

LT10.52MJA10-A

LT10.7

LT10.7M

LT10.7MA19

LT10.7MA19-A

LT10.7MA20

LT10.7MA20-A

LT10.7MA21

LT10.7MA5

LT10.7MA5-A

LT10.7MA5A10

LT10.7MA5A10-A

LT10.7MFP