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MCR8SDG Datasheet Preview

MCR8SDG Datasheet

Thyristors

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Thyristors
Surface Mount – 400V - 800V > MCR8SDG, MCR8SMG, MCR8SNG
MCR8SDG, MCR8SMG, MCR8SNG
Pb
Description
Designed primarily for half-wave ac control applications,
such as motor controls, heating controls, and power
supplies; or wherever half−wave, silicon gate−controlled
devices are needed.
Pin Out
CASE 221A
STYLE 4
12
Features
• Sensitive Gate Allows Triggering by Microcontrollers and
other Logic Circuits
• Blocking Voltage to 800 V
• On−State Current Rating of 8 A RMS at 80°C
• High Surge Current Capability − 80 A
• Rugged, Economical TO−220AB Package
• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of IGT, VGT and IH
Specified for Ease of Design
• Immunity to dv/dt − 5 V/sec Minimum at 110°C
• These are Pb−Free Devices
Functional Diagram
G
AK
Additional Information
Datasheet
Resources
Samples
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/27/19




Littelfuse

MCR8SDG Datasheet Preview

MCR8SDG Datasheet

Thyristors

No Preview Available !

Thyristors
Surface Mount – 400V - 800V > MCR8SDG, MCR8SMG, MCR8SNG
Maximum Ratings (TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage (Note 1)
(− 40 to 110°C, Sine Wave, 50 to 60 Hz,
Gate Open)
MCR8SDG
MCR8SMG
MCR8SNG
Symbol
VVDRRRMM,
Value
400
600
800
Unit
V
On-State RMS Current (180º Conduction Angles; TC = 80°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C)
Circuit Fusing Consideration (t = 8.33 ms)
IT (RMS)
ITSM
I2t
8.0
80
26.5
A
A
A²sec
Forward Peak Gate Power (Pulse Width ≤ 10 µsec,TC = 80°C)
PGM 5.0
W
Forward Average Gate Power (t = 8.3 msec, TC = 90°C)
PGM (AV)
0.5
W
Forward Peak Gate Current (Pulse Width ≤ 1.0 µsec, TC= 80°C)
IGM 2.0
A
Operating Junction Temperature Range
TJ -40 to 110 °C
Storage Temperature Range
Tstg -40 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is
not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent
with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8" from Case for
10 Seconds
Symbol
R8JC
R8JA
TL
Value
2.2
62.5
260
Unit
°C/W
°C
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Repetitive Forward or Reverse
Rated VDRM or VRRM, RGK = 1.0 kΩ
Blocking
Current
(Note
3)
(VAK
=
TJ = 25°C
TJ = 110°C
IDRM,
IRRM
-
-
- 10
µA
- 500
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Forward On−State Voltage (Note 2) (ITM = 16 A)
Gate Trigger Current (Continuous dc) (Note 4)
(VD = 12 V; RL = 100 Ω)
VTM _
_ 1.8
IGT 5.0 25 200
V
µA
Holding Current (Note 3)
(VD = 12 V, Gate Open, Initiating Current = 200 mA)
Latch Current (Note 4) (VD = 12 V, IG = 200 µA)
Gate Trigger Voltage (Continuous dc)
(Note 4)
(VD = 12 V, RL = 100 Ω)
Gate Non−Trigger Voltage
(VD = 12 V, RL = 100 Ω)
TJ = 25°C
TJ = −40°C
TJ = 110ºC
IH
IGT
VGT
tgt
− 0.5 6.0
mA
_ 0.6 8.0
0.3 0.65 1.0
_ _ 1.5
mA
V
_ 2.0 5.0
µs
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/27/19


Part Number MCR8SDG
Description Thyristors
Maker Littelfuse
PDF Download

MCR8SDG Datasheet PDF






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