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AQ3130 - TVS Diode Arrays

General Description

The AQ3130 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD).

Key Features

  • ESD protection of ±10kV contact discharge, ±15kV air discharge, (IEC 610004-2).
  • EFT protection, IEC 61000-4-4, 40A (tp=5/50ns).
  • Lightning Protection, IEC 61000-4-5 2nd edition, 2A (tp=8/20µs).
  • Low capacitance of 0.3pF @ VR=0V.
  • L ow leakage current of 50nA (max) at 28V.
  • S pace efficie.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TVS Diode Arrays (SPA®®Diodes) Low Capacitance ESD Protection - SAPQ33113300SSeerriieess AQ3130 Series 0.3pF 10KV Bidirectional Discrete TVS RoHS Pb GREEN Description The AQ3130 includes back-to-back TVS diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes up to the maximum level specified in IEC 61000-4-2 international standard without performance degradation. The back-to back configuration provides symmetrical ESD protection for data lines.