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LT1160 - Half-/Full-Bridge N-Channel Power MOSFET

Key Features

  • Floating Top Driver Switches Up to 60V.
  • Drives Gate of Top N-Channel MOSFET above Load HV Supply.
  • 180ns Transition Times Driving 10,000pF.
  • Adaptive Nonoverlapping Gate Drives Prevent Shoot-Through.
  • Top Drive Protection at High Duty Cycles.
  • TTL/CMOS Input Levels.
  • Undervoltage Lockout with Hysteresis.
  • Operates at Supply Voltages from 10V to 15V.
  • Separate Top and Bottom Drive Pins U.

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Part Number Description
LT1161 Quad Protected High-Side MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LT1160/LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers U U FEATURES ■ Floating Top Driver Switches Up to 60V ■ Drives Gate of Top N-Channel MOSFET above Load HV Supply ■ 180ns Transition Times Driving 10,000pF ■ Adaptive Nonoverlapping Gate Drives Prevent Shoot-Through ■ Top Drive Protection at High Duty Cycles ■ TTL/CMOS Input Levels ■ Undervoltage Lockout with Hysteresis ■ Operates at Supply Voltages from 10V to 15V ■ Separate Top and Bottom Drive Pins U APPLICATIO S ■ PWM of High Current Inductive Loads ■ Half-Bridge and Full-Bridge Motor Control ■ Synchronous Step-Down Switching Regulators ■ 3-Phase Brushless Motor Drive ■ High Current Transducer Drivers ■ Class D Power Amplifiers DESCRIPTIO The LT®1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drive