S-LBAS70LT3G Datasheet, Leshan Radio Company

Low forward current High breakdown voltage Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control C.

Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. APPLICATIONS Ultra high-spee.

Planar Schottky barrier diodes with an integrated guard ring for stress protection.Single diodes and double diodes with different pinning are available. We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION .

S-LBAS70LT1G

S-LBAS70-04LT1G

S-LBAS70-04LT3G

S-LBAS70-05LT1G

S-LBAS70-05LT3G

S-LBAS70-06LT1G

S-LBAS70-06LT3G

S-LBAS70BST1G

S-LBAS70BST3G

S-LBAS70BST5G

S-LBAS16LT1G

S-LBAS16WT1G

S-LBAS20HT1G