LMBT3906DW1T3G transistor equivalent, pnp transistor.
1）hFE, 100
–300 2）Low VCE(sat),≦0.4 V 3）Simplifies Circuit Design 4）Reduces Board Space 5）Reduces Component Count 6）We declare that the material of product.
and is housed in the SOT
–363 six
–leaded surface mount package. By putting two discrete d.
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