LDTDG12GPLT3G Features
* 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load).
* We declare that the material of product compliance with RoHS requirements. z
LDTDG12GPLT3G, LDTDG12GPLT1G Datasheet
Datasheet Details
LDTDG12GPLT3G, LDTDG12GPLT1G
Leshan Radio Company
319.84 KB
Bias resistor transistor.
This datasheet PDF includes multiple part numbers: LDTDG12GPLT3G, LDTDG12GPLT1G.
Please refer to the document for exact specifications by model.
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