LBC817-25LT1G Datasheet | Leshan Radio Company

LESHAN RADIO PANY, LTD. General Purpose Transistors NPN Silicon - We declare that the material of product pliance with Ro HS requirements. LBC817-16LT1G LBC817-25LT1G LBC817-40LT1G MAXIMUM RATINGS Rating Symbol Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage V CEO V CBO V EBO Collector Current - Continuous I C Value 45 50 5.0 500 Unit V V V m Adc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θJA PD R θJA T J , T stg Max Unit 225 m W 1.8 m W/°C 556 °C/W 300 2.4 417 - 55 to +150 m W m W/°C °C/W °C DEVICE MARKING LBC817- 16LT1G = 6A; LBC817- 25LT1G = 6B; LBC817- 40LT1G = 6C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min OFF CHARACTERISTICS Collector- Emitter Breakdown Voltage (IC = - 10 m A) Collector- Emitter Breakdown Voltage (VEB = 0, IC = - 10 µA) Emitter- Base Breakdown Voltage (I E = - 1.0 µA) Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150°C) 1. FR- 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CEO V (BR)CES V (BR)EBO I CBO 45 50 5.0 - -...