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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
• We declare that the material of product compliance with RoHS requirements.
LBC817-16LT1G LBC817-25LT1G LBC817-40LT1G
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage
V CEO V CBO V EBO
Collector Current — Continuous I C
Value 45 50 5.0 500
Unit V V V
mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol PD
R θJA PD
R θJA T J , T stg
Max Unit
225 mW 1.8 mW/°C 556 °C/W
300 2.
LBC817-16LT3G Datasheet
