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LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode Common Cathode
BAV70LT1
3
1 ANODE 3 CATHODE 2 ANODE
1 2
CASE 318–08, STYLE 9 SOT–23 (TO–236AB)
DEVICE MARKING
BAV70LT1 = A4
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current Peak Forward Surge Current I Symbol VR IF
FM(surge)
Value 70 200 500
Unit Vdc mAdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board (1) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.
BAV70LT1 Datasheet
