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3CG838 - SILICON PNP TRANSISTOR

Features

  • High transfer ratio fT. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -20 V VEBO -5.0 V IC -30 mA PC 250 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO ICEO IEBO hFE VCE(sat) VBE fT NF Zrb Cre VCB=-10V IE=0 VCE=-20V IB=0 VEB=-5.0V IC=0 VCE=-10V IC=-1.0mA IC=-10mA IB=-1.0mA VCE=-10V IC=-1.0mA VCB=-10V IE=1.0mA f=200MHz VCB=-10V IE=1.0mA f=5.0MHz VCE=-10V IC=-1.0mA f=2.0MHz VCE=-10V IC=-1.0mA.

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Datasheet Details

Part number 3CG838
Manufacturer LZG
File Size 210.89 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CG838 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SA838(3CG838) PNP /SILICON PNP TRANSISTOR ：， 2SC1359(3DG1359)。 Purpose: For low-frequency amplification, complementary to 2SC1359(3DG1359). :。 Features: High transfer ratio fT. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -20 V VEBO -5.0 V IC -30 mA PC 250 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO ICEO IEBO hFE VCE(sat) VBE fT NF Zrb Cre VCB=-10V IE=0 VCE=-20V IB=0 VEB=-5.0V IC=0 VCE=-10V IC=-1.0mA IC=-10mA IB=-1.0mA VCE=-10V IC=-1.0mA VCB=-10V IE=1.0mA f=200MHz VCB=-10V IE=1.0mA f=5.0MHz VCE=-10V IC=-1.0mA f=2.0MHz VCE=-10V IC=-1.0mA f=10.7MHz Min 70 150 Rating Typ -0.1 -0.7 300 2.8 22 1.2 Max -0.1 -100 -10 220 4.0 50 2.