3CG562M - SILICON PNP TRANSISTOR

Product Overview

LZG

Part number	3CG562M
Manufacturer	LZG
File Size	253.53 KB
Description	SILICON PNP TRANSISTOR
Datasheet	3CG562M Datasheet
Additional preview pages of the 3CG562M datasheet.

Excellent hFE linearity, complementary pair with 2SC1959M(3DG1959M). /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -35 V VCEO -30 V VEBO -5.0 V IC -500 mA IB -100 mA PC 400 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob Test Condition VCB=-35V VEB=-5.0V VCE=-1.0V VCE=-6.0V IC=-100mA VCE=-1.0V VCE=-6.0V VCB=-6.0V IE=0 IC=0 IC=-100mA IC=-400mA IB=-10mA IC=-100mA IC=-20mA IE=0 f=1.0MHz M.

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Published: Jul 15, 2017 |