LUF12N65 mosfet equivalent, 650v n-channel enhancement mode mosfet.
12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A
* Low On-state Resistance
* Fast Switching
* Low Gate Charge
* Fully Characterized Avalanche Voltage and Current.
active power factor correction, ballasts based on half-bridge topology.
Features
12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=.
These enhancement mode power filed effect transistors havebeen advanced technology design to provide low on-state resistance, high avalanche energy. These devices are well suited for popular AC-DC applications, active power factor correction, ballast.
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