LWH200G1202
LWH200G1202 is IGBT manufactured by LSIS.
Features
- Non Punch Through (NPT) Technology
- Ultra Fast
- 10μs Short Circuit current
- Positive VCE(on) Temperature Coefficient
- Square RBSOA
- Free Wheeling Diodes with fast and soft reverse recovery
- Industrial standard package with copper base plate
Applications
- Welder / Power Supply
- UPS / Inverter
- Industrial Motor Drive
Preliminary data
SUSPM3
108 x 62 x 29.87 mm
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Item IGBT
Diode Module
Symbol VCES VGES
ICM TSC Tj
VRRM IF IFRM Tj Tstg Viso Mt MS W
Conditions
@Tj= 150 °C, TC = 25 °C, Continuous @Tj= 150 °C, TC = 60°C, Continuous @TC = 60 °C, tp=1ms Chip Level, @Tj = 150 °C, VGE= 15V, VCES < 1200V Operating Junction Temperature
- (1) @Tj= 150 °C, TC = 25 °C @Tj= 150 °C, TC = 80 °C tp=1ms Operating Junction Temperature
- (1) Storage Temperature @AC 1minute Main Terminal Mounting torque( M6) Heat sink Mounting torque(M6)...
