* RDS(ON) ≦8Ω@VGS=4V
* RDS(ON) ≦13Ω@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current.

Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. FEATURES
* RDS(ON) ≦8Ω@.

S-L2N7002FDW1T1G

S-L2N7002DMT1G

S-L2N7002DW1T1G

S-L2N7002EM3T5G

S-L2N7002KDW1T1G

S-L2N7002KLT1G

S-L2N7002KWT1G

S-L2N7002LT1G

S-L2N7002M3T5G

S-L2980

S-L2985

S-L2SA1365ELT1G

S-L2SA1365ELT3G

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