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LESHAN RADIO COMPANY, LTD.
Power MOSFET
20 V, 285 mA, N−Channel with ESD Protection, SOT−723
Features
• Enables High Density PCB Manufacturing • 44% Smaller Footprint than SC−89 and 38% Thinner than SC−89 • Low Voltage Drive Makes this Device Ideal for Portable Equipment • Low Threshold Levels, VGS(TH) < 1.3 V • Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin
Environments such as Portable Electronics
• Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels Using the Same Basic Topology
• These are Pb−Free Devices • S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
LNTK3043NT5G Datasheet
