* RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A
* High Density Cell Design for Ultra Low On-Resistance
* High Power and Current Handing Capabil.

with a wide range of gate drive voltage (2.5V-10V) Features
* RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V,.

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) Features
* RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on.

LN9926L

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LN9436

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