L2N7002DW1T1G
L2N7002DW1T1G is Small Signal MOSFET manufactured by LRC.
LESHAN RADIO PANY, LTD.
Small Signal MOSFET 115 m Amps, 60 Volts
N- Channel SOT- 88
- Pb- Free Package is Available.
L2N7002DW1T1G/T3G
MAXIMUM RATINGS
Rating Drain- Source Voltage Drain- Gate Voltage (RGS = 1.0 MW) Drain Current
- Continuous TC = 25°C (Note 1)
- Continuous TC = 100°C (Note 1)
- Pulsed (Note 2) Gate- Source Voltage
- Continuous
- Non- repetitive (tp ≤ 50 ms) Symbol VDSS VDGR ID ID IDM Value 60 60 ± 115 ± 75 ± 800 Unit Vdc Vdc m Adc 3 2 1
VGS VGSM
± 20 ± 40
Vdc Vpk
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation Per Device FR- 5 Board (Note 1) TA = 25°C Derate Above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range 1. FR- 5 = 1.0 x 0.75 x 0.062 in Symbol PD Max 380 250 Unit m W 4 5 6
3.0 Rq JA TJ, Tstg 328
- 55 to +150 m W/°C °C/W °C
ORDERING INFORMATION
Device L2N7002DW1T1G L2N7002DW1T3G Marking K2 K2 Shipping 3000 Tape & Reel 10000 Tape & Reel
1/4
Free Datasheet http://.0PDF.
LESHAN RADIO PANY, LTD.
L2N7002DW1T1G/T3G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain- Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) Gate- Body Leakage Current, Forward (VGS = 20 Vdc) Gate- Body Leakage Current, Reverse (VGS =
- ā20 Vdc) TJ = 25°C TJ = 125°C V(BR)DSS IDSS IGSSF IGSSR 60
- -
- -
- -
- -
- - 1.0 500 100
- 100 Vdc µAdc n Adc n Adc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) On- State Drain Current (VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) Static Drain- Source On- State Voltage (VGS = 10 Vdc, ID = 500 m Adc) (VGS = 5.0 Vdc, ID = 50 m Adc) Static Drain- Source On- State Resistance TC = 25°C (VGS = 10 V, ID = 500 m Adc) TC = 125°C (VGS = 5.0 Vdc, ID = 50 m Adc) TC = 25°C TC = 125°C Forward Transconductance (VDS ≥ 2.0 VDS(on), ID = 200 m Adc) VGS(th) ID(on) VDS(on)
- - r DS(on)
- -...
