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LSE60R092GF Datasheet Preview

LSE60R092GF Datasheet

N-channel Power MOSFET

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LSB60R092GF/LSD60R092GF/LSE60R092GF
LonFET
Lonten N-channel 600V, 40A, 0.092Ω LonFETTM Power MOSFET
Description
LonFETTM Power MOSFET is fabricated using
advanced super junction technology. The resulting
device has extremely low on resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
Product Summary
VDS @ Tj,max
RDS(on),max
650V
0.092Ω
IDM 120A
Qg,typ
66nC
Features
Ultra low RDS(on)
Ultra low gate charge (typ. Qg = 66nC)
100% UIS tested
RoHS compliant
Applications
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
TO-247
TO-220MF
D
TO-263
G
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
Pulsed drain current 1)
( TC = 25°C )
( TC = 100°C )
Gate-Source voltage
Avalanche energy, single pulse 2)
Power Dissipation TO-247 ( TC = 25°C )
- Derate above 25°C
Power Dissipation TO-220MF ( TC = 25°C )
- Derate above 25°C
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
Symbol
VDSS
ID
IDM
VGSS
EAS
PD
TJ, TSTG
IS
IS,pulse
Value
600
40
26
120
±30
1000
278
2.22
35
0.28
-55 to +150
40
120
Unit
V
A
A
A
V
mJ
W
W/°C
W
W/°C
°C
A
A
Version 3.0 2018
1
www.lonten.cc




LONTEN

LSE60R092GF Datasheet Preview

LSE60R092GF Datasheet

N-channel Power MOSFET

No Preview Available !

LSB60R092GF/LSD60R092GF/LSE60R092GF
LonFET
Thermal Characteristics TO-247/TO-263
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-Case
RθJC
0.45 °C/W
Thermal Resistance, Junction-to-Ambient
RθJA
62 °C/W
Soldering temperature, wavesoldering only allowed
Tsold
at leads. (1.6mm from case for 10s)
260 °C
Thermal Characteristics TO-220MF
Parameter
Symbol
Thermal Resistance, Junction-to-Case
RθJC
Thermal Resistance, Junction-to-Ambient
RθJA
Soldering temperature, wavesoldering only allowed
Tsold
at leads. (1.6mm from case for 10s)
Value
3.6
62.5
260
Unit
°C/W
°C/W
°C
Package Marking and Ordering Information
Device
Device Package
Marking
LSB60R092GF
TO-247
LSB60R092GF
LSD60R092GF
TO-220MF
LSD60R092GF
LSE60R092GF
TO-263-2L
LSE60R092GF
Units/Tube
30
50
Units/Real
800
Electrical Characteristics Tc = 25°C unless otherwise noted
Parameter
Symbol
Test Condition
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
BVDSS
VGS(th)
IDSS
Gate leakage current, Forward
IGSSF
VGS=0 V, ID=0.25 mA
VDS=VGS, ID=0.25 mA
VDS=600 V, VGS=0 V,
Tj = 25°C
Tj = 125°C
VGS=30 V, VDS=0 V
Gate leakage current, Reverse
Drain-source on-state resistance
IGSSR
RDS(on)
Gate resistance
Dynamic characteristics
RG
VGS=-30 V, VDS=0 V
VGS=10 V, ID=20 A
Tj = 25°C
Tj = 150°C
f=1 MHz, open drain
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
td(on)
tr
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDD = 400 V, ID = 20 A
RG = 10 Ω, VGS=10 V
Turn-off delay time
Fall time
Gate charge characteristics
td(off)
tf
Version 3.0 2018
2
Min.
Typ.
Max.
Unit
600 -
-
2.0 3.0 4.0
- -1
- 10 -
- - 100
- - -100
-
-
0.084
0.092
- 0.22 -
- 2.0 -
V
V
μA
nA
nA
Ω
Ω
- 3000 -
- 2500 -
- 10 -
- 31.2 -
- 43.8 -
- 151.4 -
- 12.3
-
pF
ns
www.lonten.cc


Part Number LSE60R092GF
Description N-channel Power MOSFET
Maker LONTEN
Total Page 10 Pages
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