LSE60R092GF mosfet equivalent, n-channel power mosfet.
* Ultra low RDS(on)
* Ultra low gate charge (typ. Qg = 66nC)
* 100% UIS tested
* RoHS compliant
Applications
* Power faction correction (PFC).
* S.
which require superior power density and outstanding efficiency.
Product Summary
VDS @ Tj,max RDS(on),max
650V 0.092Ω.
LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
Produ.
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