* Ultra low RDS(on)
* Ultra low gate charge (typ. Qg = 66nC)
* 100% UIS tested
* RoHS compliant Applications
* Power faction correction (PFC).
* S.

which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max RDS(on),max 650V 0.092Ω.

LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Produ.

LSB20N65

LSB480

LSBTH10T1G

LSBTH10T3G

LS-0730

LS-0810

LS-0880

LS-0905

LS-0940

LS-1050

LS-1300

LS-1550

LS-3101S

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