GPF5N10 mosfet equivalent, n-channel 100v enhancement mode power mosfet.
* Low RDS(ON) & FOM
* Extremely low switching loss
* Excellent stability and uniformity
* Easy to drive
* Marking: GPF5N10
* Qualified according t.
GPF5N10 use advanced LSFGMOS technology to provide low RDS(ON),low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Synchronous-rectification applic.
Image gallery
TAGS
Download (Size : 427.50KB)