MMDL707
MMDL707 is Schottky Barrier Diode manufactured by LGE.
Features
Low reverse leakage- IR=200n A(Max.). Very Low Capacitance- 1.0p F @20V. Extremely Low minority carrier lifetime. High reverse leakage- 70V(min.)
Dimensions in inches and (millimeters)
Applications
For high-efficiency UHF and VHF detector applications.
Ordering Information
Type No. MMDL770 Marking 5H Package Code SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter DC reverse voltage Power Dissipation Thermal resistance,junction to ambient air Junction temperature Storage temperature range Symbol VR Pd Rθj A Tj Tstg Limits 70 200 635 150 -55-150 Unit V m W ℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Reverse Breakdown Voltage Forward voltage Reverse leakage current Total capacitance Symbol V(BR)R VF IR CT Conditions IR=10μA IF=10m A VR=35V VR=20V,f=1.0MHz Min. 70 0.7 9.0 0.5 1.0 200 1.0 Typ. Max. Unit V V n A p F http://.luguang.cn mail:lge@luguang.cn
Free Datasheet http://../
Schottky Barrier Diode
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified http://.luguang.cn mail:lge@luguang.cn
Free Datasheet...