MD56V62160E ram equivalent, synchronous dynamic ram.
* Silicon gate, quadruple poly-silicon CMOS, 1-transistor memory cell
* 4-Bank 1,048,576-word 16-bit configuration
* Single 3.3 V power supply, 0.3 V tol.
The MD56V62160E is a 4-Bank 1,048,576-word 16-bit Synchronous dynamic RAM fabricated in LAPIS Semiconductor’s silicon-gate CMOS technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.
FEATURES
* Silicon gate, qu.
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