logo

MD56V62160E Datasheet, LAPIS

MD56V62160E ram equivalent, synchronous dynamic ram.

MD56V62160E Avg. rating / M : 1.0 rating-11

datasheet Download

MD56V62160E Datasheet

Features and benefits


* Silicon gate, quadruple poly-silicon CMOS, 1-transistor memory cell
* 4-Bank  1,048,576-word  16-bit configuration
* Single 3.3 V power supply, 0.3 V tol.

Description

The MD56V62160E is a 4-Bank  1,048,576-word  16-bit Synchronous dynamic RAM fabricated in LAPIS Semiconductor’s silicon-gate CMOS technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible. FEATURES
* Silicon gate, qu.

Image gallery

MD56V62160E Page 1 MD56V62160E Page 2 MD56V62160E Page 3

TAGS

MD56V62160E
SYNCHRONOUS
DYNAMIC
RAM
MD56V62160
MD56V62160H
MD56V62160M-10TA
LAPIS

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts