INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4368
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: VCEO= 150V(Min)
·Complement to Type 2SA1657
APPLICATIONS
·Designed for TV, monitor vertical output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150 V
VCEO
Collector-Emitter Voltage
150 V
VEBO
Emitter-Base Voltage
5.0 V
IC Collector Current-Continuous
1.5 A
IB Base Current-Continuous
Collector Power Dissipation
@TC= 25℃
PC
Collector Power Dissipation
@Ta= 25℃
TJ Junction Temperature
Tstg Storage Temperature
0.5 A
20
W
2
150 ℃
-55~150 ℃
isc Website：www.iscsemi.cn
