Datasheet Details
| Part number | C4368 |
|---|---|
| Manufacturer | Korea Electronics |
| File Size | 170.59 KB |
| Description | 2SC4368 |
| Download | C4368 Download (PDF) |
|
|
Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | C4368 |
|---|---|
| Manufacturer | Korea Electronics |
| File Size | 170.59 KB |
| Description | 2SC4368 |
| Download | C4368 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage : VCEO= 150V(Min) ·Complement to Type 2SA1657 APPLICATIONS ·Designed for TV, monitor vertical output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 1.5 A IB Base Current-Continuous Collector Power Dissipation @TC= 25℃ PC Collector Power Dissipation @Ta= 25℃ TJ Junction Temperature Tstg Storage Temperature 0.5 A 20 W 2 150 ℃ -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC4368 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA;
| Part Number | Description |
|---|