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HSCH-9161 - GaAs Detector Diode

Description

The HSCH-916x is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode (MBID) process.

Typ.

Min.

65 150 °

Features

  • Low junction capacitance.
  • fc > 200 GHz.
  • Lower temperature coefficient than silicon.
  • Durable construction Typical 6 gram beam lead strength High power handling capability 02 | Keysight | HSCH-9161 HSCH-9162 GaAs Detector Diode.
  • Data Sheet.

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Datasheet Details

Part number HSCH-9161
Manufacturer Keysight
File Size 571.41 KB
Description GaAs Detector Diode
Datasheet download datasheet HSCH-9161 Datasheet

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HSCH-9162 GaAs Detector Diode

Full PDF Text Transcription (Reference)

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Keysight Technologies HSCH-9161 HSCH-9162 GaAs Detector Diode Data Sheet Features – Low junction capacitance – fc > 200 GHz – Lower temperature coefficient than silicon – Durable construction Typical 6 gram beam lead strength High power handling capability 02 | Keysight | HSCH-9161 HSCH-9162 GaAs Detector Diode – Data Sheet Description The HSCH-916x is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode (MBID) process. Absolute Maximum Ratings Symbol Top Tstg PB Parameters/conditions Operating temperature range Storage temperature range Burnout power Typ. Min. Max. Units –65 150 °C –65 200 °C 20 dBm DC Specifications/Physical Properties (TA = 25 °C) Part number HSCH-9161 HSCH-9162 200 Junction capacitance (pF) Typ. 0.035 0.
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