SI2301BDS mosfet equivalent, p-channel enhancement mosfet.
* VDS (V) =-20V
* RDS(ON) ＜ 100mΩ (VGS =-4.5V)
* RDS(ON) ＜ 150mΩ (VGS =-2.5V)
G1
S2
3D
* Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Volt.
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