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SMD Type
PNP Transistors PBSS5540Z (KBSS5540Z)
Transistors
■ Features
● Low collector-emitter saturation voltage ● High current capability ● Improved device reliability due to reduced heat generation.
2, 4
1
3
SOT-223
6.50±0.2 3.00±0.1
4
10
Unit:mm
7.0±0.3 3.50±0.2
1.80 (max) 0.02 ~ 0.1
123
2.30 (typ)
4.60 (typ)
0.70±0.1
0.250 Gauge Plane
1.Base 2.Collector 3.Emitter 4.Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Peak Collector Current Peak Base Current Collector Power Dissipation (Note.1)
(Note.2) thermal resistance from junction to ambient (Note.