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Kexin

PBSS5540Z Datasheet Preview

PBSS5540Z Datasheet

PNP Transistors

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SMD Type
PNP Transistors
PBSS5540Z (KBSS5540Z)
Transistors
Features
Low collector-emitter saturation voltage
High current capability
Improved device reliability due to reduced heat generation.
2, 4
1
3
SOT-223
6.50±0.2
3.00±0.1
4
Unit:mm
123
2.30 (typ)
4.60 (typ)
0.70±0.1
0.250
Gauge Plane
1.Base
2.Collector
3.Emitter
4.Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Peak Collector Current
Peak Base Current
Collector Power Dissipation (Note.1)
(Note.2)
thermal resistance from junction to ambient (Note.3)
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
PC
Rth j-a
TJ
Tstg
Rating
-40
-40
-6
-5
-10
-2
1.35
2
92
150
-65 to 150
Unit
V
A
W
K/W
Note.1: Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm 2.
Note.2:Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm 2 .
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
HandBook"
Note.3:Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2 .
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Kexin

PBSS5540Z Datasheet Preview

PBSS5540Z Datasheet

PNP Transistors

No Preview Available !

SMD Type
Transistors
PNP Transistors
PBSS5540Z (KBSS5540Z)
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Equivalent on-resistance
Base - emitter saturation voltage
Base - emitter turn-on voltage
DC current gain
Collector capacitance
Transition frequency
Note.1:Pulse test: tp 300 μs; δ 0.02.
Symbol
Test Conditions
VCBO Ic= -100 μAIE=0
VCEO Ic= -1 mAIB=0
VEBO IE= -100μAIC=0
ICBO
VCB= -30 V , IE=0
VCB= -30 V , IE=0; Tj=150
IEBO VEB= -5V , IC=0
IC=-500 mA, IB=-5 mA
IC=-1A, IB=-10mA
VCE(sat)
IC=-2A, IB=-200mA
IC=-5A, IB=-500mA
RCE(sat) IC=-2A, IB=-500mA (Note.1)
VBE(sat) IC= -5A, IB=- 500mA
VBE(on) VCE= -2V, IC= -2A
hFE(1) VCE= -2V, IC= -500mA
hFE(2) VCE=- 2V, IC= -1A (Note.1)
hFE(3) VCE=- 2V, IC= -2A (Note.1)
hFE(4) VCE=- 2V, IC= -5A (Note.1)
CC VCB= -10V, IE=Ie=0 ,f=1MHz
fT VCE= -10V, IC= -100mA,f=100MHz
Min Typ Max Unit
-40
-40 V
-6
-100 nA
-50 uA
-100 nA
-80 -120
-120 -170
-110 -160
mV
-250 -375
55 80 mΩ
-1.3
-0.8 -1.25
V
250 350
200 300
150 250
50 150
90 105 pF
60 120
MHz
Marking
Marking
PB5540
2 www.kexin.com.cn


Part Number PBSS5540Z
Description PNP Transistors
Maker Kexin
PDF Download

PBSS5540Z Datasheet PDF






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