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Kexin

PBSS5160T Datasheet Preview

PBSS5160T Datasheet

PNP Transistors

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SMD Type
Transistors
PNP Transistors
PBSS5160T (KBSS5160T)
Features
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
High efficiency, reduces heat generation
Reduces printed-circuit board area required
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
12
0.95 +0.1
-0.1
1.9 +0.1
-0.1
C
B
E
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Note.1
Note.2
Collector Current - Pulse
Base Current
Base Current - Pulse
Note.1
Collector Power Dissipation
Note.2
Note.3
Note.1
Tthermal Resistance From Junction to Ambient Note.2
Note.3
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
IBP
PC
RθJA
TJ
Tstg
Rating
-80
-60
-5
-0.9
-1
-2
-0.3
-1
270
400
1.25
465
312
100
150
-65 to 150
Unit
V
A
mW
W
/W
Note.1 : Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Note.2 : Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad.
Note.3 : Operated under pulsed conditions: duty cycle δ 20 %, pulse width tp 10 ms.
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Kexin

PBSS5160T Datasheet Preview

PBSS5160T Datasheet

PNP Transistors

No Preview Available !

SMD Type
Transistors
PNP Transistors
PBSS5160T (KBSS5160T)
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emittercut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter turn-on voltage
Equivalent on-resistance
DC current gain
Collector output capacitance
Transition frequency
Note.1: Pulse test: tp 300 us; δ 0.02.
Symbol
Test Conditions
VCBO Ic= -100 μAIE=0
VCEO Ic= -1 mAIB=0
VEBO IE= -100 uAIC=0
ICBO
VCB= -60 V , IE=0
VCB= -60 V , IE=0 , TJ=150
ICES VCE= -60 V , IE=0
IEBO VEB= -5V , IC=0
IC=-100 mA, IB=-1mA
VCE(sat) IC=-500 mA, IB=-50mA
IC=-1 A, IB=-100mA (Note.1)
VBE(sat) IC=-1 A, IB=-50mA
VBE(on) VCE= -5V, IC= -1A
RCE(sat) IC=-1 A, IB=-100mA (Note.1)
VCE= -5V, IC= -1mA
hFE VCE= -5V, IC= -500mA
VCE= -5V, IC= -1A
Cob VCB= -10V, IE=ie=0,f=1MHz
fT VCE= -10V, IC= -50mA,f=100MHz
Min Typ Max Unit
-80
-60 V
-5
-100 nA
-50 uA
-100
-100
nA
-160
-175 mV
-330
-1.1
V
-0.9
330 mΩ
200 350
150 250
100 160
15 pF
150 220
MHz
Marking
Marking
U6*
Typical Characterisitics
103
handbook, full pagewidth
Zth
(K/W)
102
δ=1
0.75
0.5
0.33
0.2
0.1
0.05
10 0.02
0.01
0
1
105
104
103
102
Mounted on printed-circuit board; standard footprint.
101
1
10 102
Fig.1 Transient thermal impedance as a function of pulse time; typical values.
tp (s)
103
2 www.kexin.com.cn


Part Number PBSS5160T
Description PNP Transistors
Maker Kexin
PDF Download

PBSS5160T Datasheet PDF






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