Datasheet4U Logo Datasheet4U.com

MMBD101 - Schottky Barrier Diodes

Key Features

  • Low Noise Figure-6.0dB Typ@1.0GHz Very Low Capacitance-Less Than 1.0pF@zero Volts High Forward Conductance-0.5volts(typ)@IF=10mA +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute M axim um Ratings Ta = 25 Param eter Reverse voltage Forward Power Dissipation @TA = 25 Derate above 25 Junction tem perature Storage tem perature range Sym bol VR pF Tj T stg V a lu e 7.0 U n it V 280 2.2 150 -55 to +150 mW mW/ 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MMBD101 SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE Pan Jit International
MMBD101 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP
MMBD101 HOT-CARRIER UHF MIXER DIODE Motorola
MMBD101 SILICON SCHOTTKY BARRIER DIODES ON
MMBD101 Schottky Barrier Diode LGE

Other Datasheets by Kexin Semiconductor

Part Number Description
MMBD1201 Switching Diodes
MMBD1203 Switching Diodes
MMBD1204 Switching Diodes
MMBD1205 Switching Diodes
MMBD1701 High Conductance Low Leakage Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Schottky Barrier Diodes MMBD101 Diodes Features Low Noise Figure-6.0dB Typ@1.0GHz Very Low Capacitance-Less Than 1.0pF@zero Volts High Forward Conductance-0.5volts(typ)@IF=10mA +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute M axim um Ratings Ta = 25 Param eter Reverse voltage Forward Power Dissipation @TA = 25 Derate above 25 Junction tem perature Storage tem perature range Sym bol VR pF Tj T stg V a lu e 7.0 U n it V 280 2.2 150 -55 to +150 mW mW/ 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.