MJD350
MJD350 is PNP Epitaxial Silicon Transistor manufactured by Kexin Semiconductor.
Features
Load Formed for Surface Mount Application Straight Lead
+9.70 0.2 -0.2
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30+0.1 -0.1
0.50+0.8 -0.7
Unit: mm
+1.50 0.15 -0.15
+ 0 .1 55 .5 5 -0.15
0.80+0.1 -0.1
0.127 max
+02.65 .25 -0.1
+00.50 .15 -0.15
+01.50 .28 -0.1
2.3 4.60+0.15
-0.15
0.60+0.1 -0.1
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25 unless otherwise noted
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC = 25 ) Collector Dissipation (Ta = 25 ) Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC ICP
TJ TSTG
Rating -300 -300
-3 -0.5 -0.75 15 1.56 150 -65 to 150
Unit V V V A A A W W
Electrical Characteristics Ta = 25 unless otherwise noted
Parameter Collector-Emitter Sustaining Voltage
- Collector Cut-off Current Emitter Cut-off Current DC Current Gain
-...
