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KRLML6401 Datasheet Preview

KRLML6401 Datasheet

P-Channel Enhancement MOSFET

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SMD Type
P-Channel Enhancement MOSFET
IRLML6401 (KRLML6401)
MOSFET
Features
Ultra low on-resistance.
P-Channel MOSFET.
Fast switching.
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
12
0.95 +0.1
-0.1
1.9 +0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
11.. BGasaete
22..ESmiotutrecre
33..cDolraleicntor
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current VGS=4.5V @ TA=25
Continuous Drain Current VGS=4.5V@ TA=70
Pulsed Drain Current a
Power Dissipation
@ TA=25
Power Dissipation
@ TA=70
Single Pulse Avalanche Energy b
Thermal Resistance.Junction- to-Ambient
Linera Derating Factor
Junction Temperature
Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
RthJA
TJ
Tstg
Rating
-12
±8
-4.3
-3.4
-34
1.3
0.8
33
100
0.01
150
-55 to 150
Notes:
a.Repetitive Rating :Pulse width limited by maximum junction temperature
b.Starting TJ=25, L=3.5mH, RG=25Ω, IAS=-4.3A
Unit
V
A
W
mJ
/W
W/
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Kexin

KRLML6401 Datasheet Preview

KRLML6401 Datasheet

P-Channel Enhancement MOSFET

No Preview Available !

IRLML6401 (KRLML6401)
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-Source Breakdown Voltage
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body leakage current
Gate Threshold Voltage
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS(On)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
gFS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Qrr
IS
VSD
Test Conditions
ID=-250μA, VGS=0V
VDS=-12V, VGS=0V
VDS=-9.6V, VGS=0V, TJ= 55
VDS=0V, VGS=±8V
VDS=VGS ID=-250μA
VGS=-4.5V, ID=-4.3A
VGS=-2.5V, ID=-2.5A
VGS=-1.8V, ID=-2A
VDS=-10V, ID=-4.3A
VGS=0V, VDS=-10V, f=1MHz
VGS=-5.0V, VDS=-10V, ID=-4.3A
ID=-1.0A, VDS=-6.0V, RL=6Ω,RGEN=89Ω
IF=-1.3A, dI/dt=-100A/μs
IF=-1.3A, dI/dt=-100A/μs
IS=-1.3A,VGS=0V
Min Typ Max Unit
-12 V
-1 μA
-25
±100 nA
-0.4 -0.55 -0.95 V
50
85 mΩ
125
8.6 S
830
180 pF
125
10 15
1.4 2.1 nC
2.6 3.9
11
32
250 ns
210
22 33
8 12 Nc
1.3 A
-1.2 V
Marking
Marking
1F *
2i


Part Number KRLML6401
Description P-Channel Enhancement MOSFET
Maker Kexin
Total Page 6 Pages
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