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KPA2790GR - MOS Field Effect Transistor

Key Features

  • Low on-state resistance N-channel RDS(on)1 = 28 m RDS(on)2 = 40 m P-channel RDS(on)1 = 60 m RDS(on)2 = 80 m Low input capacitance N-channel Ciss = 500 pF TYP. P-channel Ciss = 460 pF TYP. Built-in gate protection diode Small and surface mount package MAX. (VGS = 10 V, ID = 3 A) MAX. (VGS = 4.5 V, ID = 3 A) MAX. (VGS = -10 V, ID = -3 A) MAX. (VGS = -4.5 V, ID = -3 A) IC IC Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Cur.

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SMD Type MOS Field Effect Transistor KPA2790GR Features Low on-state resistance N-channel RDS(on)1 = 28 m RDS(on)2 = 40 m P-channel RDS(on)1 = 60 m RDS(on)2 = 80 m Low input capacitance N-channel Ciss = 500 pF TYP. P-channel Ciss = 460 pF TYP. Built-in gate protection diode Small and surface mount package MAX. (VGS = 10 V, ID = 3 A) MAX. (VGS = 4.5 V, ID = 3 A) MAX. (VGS = -10 V, ID = -3 A) MAX. (VGS = -4.