Datasheet4U Logo Datasheet4U.com

KPA1890 - MOS Field Effect Transistor

Key Features

  • Can be driven by a 4.0-V power source Low on-state resistance N-channel RDS(on)1 = 27 m RDS(on)2 = 37 m RDS(on)3 = 47 m P-channel RDS(on)1 = 37 m RDS(on)2 = 56 m RDS(on)3 = 64 m MAX. (VGS = 10 V, ID = 3.0 A) MAX. (VGS = 4.5 V, ID = 3.0 A) MAX. (VGS = 4.0 V, ID = 3 A) MAX. (VGS = -10 V, ID = -2.5 A) MAX. (VGS = -4.5 V, ID = -2.5 A) MAX. (VGS = -4.0 V, ID = -2.5 A) TSSOP-8 Unit: mm 1 :Drain1 5 :Gate2 2, 3 :Source1 6, 7 :Source2 8 :Drain2 Built-in G-S protection diode against ESD 4 :Gate1.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
KPA-1606SURCK 1.6 x 0.6 mm Right Angle SMD Chip LED Lamp Kingbright
KPA-2107LZGCK-3.0U Right Angle Surface LED Lamp Kingbright
KPA-2107SURCK 2.1 x 0.6 mm Right Angle Surface LED Lamp Kingbright
KPA-3010 RIGHT ANGLE SMD CHIP LED LAMPS Kingbright Corporation
KPA-3010F3C Right Angle Infrared Emitting Diode Kingbright

Other Datasheets by Kexin Semiconductor

Part Number Description
KPA1816 MOS Field Effect Transistor
KPA1871 MOS Field Effect Transistor
KPA1873 MOS Field Effect Transistor
KPA1716 MOS Field Effect Transistor
KPA1750 MOS Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type MOS Field Effect Transistor KPA1890 IC IC Features Can be driven by a 4.0-V power source Low on-state resistance N-channel RDS(on)1 = 27 m RDS(on)2 = 37 m RDS(on)3 = 47 m P-channel RDS(on)1 = 37 m RDS(on)2 = 56 m RDS(on)3 = 64 m MAX. (VGS = 10 V, ID = 3.0 A) MAX. (VGS = 4.5 V, ID = 3.0 A) MAX. (VGS = 4.0 V, ID = 3 A) MAX. (VGS = -10 V, ID = -2.5 A) MAX. (VGS = -4.5 V, ID = -2.5 A) MAX. (VGS = -4.0 V, ID = -2.