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KPA1871 - MOS Field Effect Transistor

Key Features

  • Can be driven by a 2.5-V power source Low on-state resistance RDS(on)1 = 26 m RDS(on)2 = 27 m RDS(on)3 = 38 m TYP. (VGS = 4.5 V, ID = 3.0 A) TYP. (VGS = 4.0 V, ID = 3.0 A) TYP. (VGS = 2.5 V, ID = 3.0 A) TSSOP-8 Unit: mm Built-in G-S protection diode against ESD 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (P.

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SMD Type MOS Field Effect Transistor KPA1871 IC IC Features Can be driven by a 2.5-V power source Low on-state resistance RDS(on)1 = 26 m RDS(on)2 = 27 m RDS(on)3 = 38 m TYP. (VGS = 4.5 V, ID = 3.0 A) TYP. (VGS = 4.0 V, ID = 3.0 A) TYP. (VGS = 2.5 V, ID = 3.0 A) TSSOP-8 Unit: mm Built-in G-S protection diode against ESD 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (Pulse) *1 Total Power Dissipation *2 Channel Temperature Storage Temperature *1 PW 10 s, Duty cycle 1% Symbol VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Rating 30 12 6 80 2.