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KPA1792 - MOS Field Effect Transistor

Key Features

  • Low on-state resistance N-channel RDS(on)1 = 26 m RDS(on)2 = 36 m RDS(on)3 = 42 m P-channel RDS(on)1 = 36 m RDS(on)2 = 54 m RDS(on)3 = 65 m Low input capacitance N-channel Ciss = 760 pF TYP. P-channel Ciss = 900 pF TYP. Built-in gate protection diode Small and surface mount package MAX. (VGS = 10 V, ID = 3.4 A) MAX. (VGS = 4.5 V, ID = 3.4 A) MAX. (VGS = 4.0 V, ID = 3.4 A) MAX. (VGS = -10 V, ID = -2.9 A) MAX. (VGS = -4.5 V, ID = -2.9 A) MAX. (VGS = -4.0 V, ID = -2.9 A) IC IC Absolute Maximum Ra.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type MOS Field Effect Transistor KPA1792 Features Low on-state resistance N-channel RDS(on)1 = 26 m RDS(on)2 = 36 m RDS(on)3 = 42 m P-channel RDS(on)1 = 36 m RDS(on)2 = 54 m RDS(on)3 = 65 m Low input capacitance N-channel Ciss = 760 pF TYP. P-channel Ciss = 900 pF TYP. Built-in gate protection diode Small and surface mount package MAX. (VGS = 10 V, ID = 3.4 A) MAX. (VGS = 4.5 V, ID = 3.4 A) MAX. (VGS = 4.0 V, ID = 3.4 A) MAX. (VGS = -10 V, ID = -2.9 A) MAX. (VGS = -4.5 V, ID = -2.9 A) MAX. (VGS = -4.0 V, ID = -2.