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KPA1790 - MOS Field Effect Transistor

Key Features

  • Dual chip type Low on-state resistance N-channel RDS(on)1 = 0.12 RDS(on)2 = 1.19 P-channel RDS(on)1 = 0.45 RDS(on)2 = 0.74 Low input capacitance N-channel Ciss = 180 pF TYP. P-channel Ciss = 230 pF TYP. Built-in G-S protection diode Small and surface mount package TYP. (VGS = 10 V, ID = 0.5 A) TYP. (VGS = 4 V, ID = 0.5 A) TYP. (VGS = -10 V, ID = -0.35 A) TYP. (VGS = -4 V, ID = -0.35 A) IC IC Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (.

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Other Datasheets by Kexin Semiconductor

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SMD Type MOS Field Effect Transistor KPA1790 Features Dual chip type Low on-state resistance N-channel RDS(on)1 = 0.12 RDS(on)2 = 1.19 P-channel RDS(on)1 = 0.45 RDS(on)2 = 0.74 Low input capacitance N-channel Ciss = 180 pF TYP. P-channel Ciss = 230 pF TYP. Built-in G-S protection diode Small and surface mount package TYP. (VGS = 10 V, ID = 0.5 A) TYP. (VGS = 4 V, ID = 0.5 A) TYP. (VGS = -10 V, ID = -0.35 A) TYP. (VGS = -4 V, ID = -0.35 A) IC IC Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) *1 Total Power Dissipation (1 unit) *2 Total Power Dissipation (2 units) *2 Channel Temperature Storage Temperature Single Avalanche Current *3 Single Avalanche Energy *3 *1.