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KPA1764 - MOS Field Effect Transistor

Key Features

  • Dual chip type Low on-state resistance RDS(on)1 = 27 m RDS(on)2 = 32 m RDS(on)3 = 34 m TYP. (VGS = 10 V, ID = 3.5 A) TYP. (VGS = 4.5 V, ID = 3.5 A) TYP. (VGS = 4.0 V, ID = 3.5 A) 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 Low input capacitance Ciss = 1300 pF TYP. Built-in G-S protection diode Small and surface mount package 5, 6 : Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain C.

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SMD Type MOS Field Effect Transistor KPA1764 IC IC Features Dual chip type Low on-state resistance RDS(on)1 = 27 m RDS(on)2 = 32 m RDS(on)3 = 34 m TYP. (VGS = 10 V, ID = 3.5 A) TYP. (VGS = 4.5 V, ID = 3.5 A) TYP. (VGS = 4.0 V, ID = 3.5 A) 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 Low input capacitance Ciss = 1300 pF TYP.