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KPA1758 - MOS Field Effect Transistor

Key Features

  • Dual MOS FET chips in small package 2.5 V gate drive type low on-state resistance RDS(on)1 = 30 m RDS(on)2 = 40 m (MAX. ) (VGS = 4.5 V, ID = 3.0 A) (MAX. ) (VGS = 2.5 V, ID = 3.0 A) 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 Low Ciss : Ciss = 1100 pF (TYP. ) Built-in G-S protection diode Small and surface mount package Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (P.

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Other Datasheets by Kexin Semiconductor

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SMD Type MOS Field Effect Transistor KPA1758 IC IC Features Dual MOS FET chips in small package 2.5 V gate drive type low on-state resistance RDS(on)1 = 30 m RDS(on)2 = 40 m (MAX.) (VGS = 4.5 V, ID = 3.0 A) (MAX.) (VGS = 2.5 V, ID = 3.0 A) 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 Low Ciss : Ciss = 1100 pF (TYP.) Built-in G-S protection diode Small and surface mount package Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (Pulse) *1 Total Power Dissipation (1 unit) *2 Total Power Dissipation (2 unit) *2 Channel Temperature Storage Temperature *1 PW 10 s, Duty cycle 1% Symbol VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg Rating 30 12.0 6.0 24 1.7 2.