Datasheet4U Logo Datasheet4U.com

KPA1750 - MOS Field Effect Transistor

Key Features

  • Dual MOSFET chips in small package 4V Gate Drive Type and Low On-Resistance RDS(on)1 = 0.09 RDS(on)2 = 0.18 TYP. (VGS = -10 V, ID = -1.8 A) TYP. (VGS = -4 V, ID = -1.8A) IC IC Low Ciss : Ciss = 540 pF TYP. Built-in G-S protection diode Small and surface mount package 1: Source 1 2: Gate 1 7,8: Drain 1 3: Source 2 4: Gate 2 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Ta = 25 Drain Current (Pulse).
  • 1 Total Power D.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
KPA-1606SURCK 1.6 x 0.6 mm Right Angle SMD Chip LED Lamp Kingbright
KPA-2107LZGCK-3.0U Right Angle Surface LED Lamp Kingbright
KPA-2107SURCK 2.1 x 0.6 mm Right Angle Surface LED Lamp Kingbright
KPA-3010 RIGHT ANGLE SMD CHIP LED LAMPS Kingbright Corporation
KPA-3010F3C Right Angle Infrared Emitting Diode Kingbright

Other Datasheets by Kexin Semiconductor

Part Number Description
KPA1758 MOS Field Effect Transistor
KPA1716 MOS Field Effect Transistor
KPA1764 MOS Field Effect Transistor
KPA1790 MOS Field Effect Transistor
KPA1792 MOS Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type MOS Field Effect Transistor KPA1750 Features Dual MOSFET chips in small package 4V Gate Drive Type and Low On-Resistance RDS(on)1 = 0.09 RDS(on)2 = 0.18 TYP. (VGS = -10 V, ID = -1.8 A) TYP. (VGS = -4 V, ID = -1.8A) IC IC Low Ciss : Ciss = 540 pF TYP. Built-in G-S protection diode Small and surface mount package 1: Source 1 2: Gate 1 7,8: Drain 1 3: Source 2 4: Gate 2 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Ta = 25 Drain Current (Pulse) *1 Total Power DissipationTa = 25 Total Power DissipationTa = 25 Channel Temperature Storage Temperature *1 PW 10 s, Duty cycle 1% *2 *2 Tch Tstg Symbol VDSS VGSS ID(DC) ID(pulse) PT Rating -20 20 3.5 14 1.7 2.