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KO3402 - N-Channel MOSFET

Features

  • VDS (V) = 30V ID = 4 A RDS(ON) 55m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V) RDS(ON) 110m (VGS = 2.5V) +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 11.. BGasaete 22.. ESmiotutrecre 33.. cDolrlaeicntor Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25 TA=70 Pulsed Drain Current Power Dissipation TA=25 TA=70 Thermal R.

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Part Number Description Manufacturer

Other Datasheets by Kexin Semiconductor

Part Number Description
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KO3404 N-Channel MOSFET
KO3407 P-Channel Enhancement MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type N-Channel Enhancement Mode Field Effect Transistor AO3402 (KO3402) MOSFIECT Features VDS (V) = 30V ID = 4 A RDS(ON) 55m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V) RDS(ON) 110m (VGS = 2.5V) +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 11.. BGasaete 22..ESmiotutrecre 33..cDolrlaeicntor Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25 TA=70 Pulsed Drain Current Power Dissipation TA=25 TA=70 Thermal Resistance.Junction-to-Ambient Thermal Resistance.Junction-to-Case Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD R JA R JC TJ, TSTG Rating 30 12 4 3.4 15 1.