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KI001P - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-12V.
  • ID =-2.8 A.
  • RDS(ON) ＜ 100mΩ (VGS =-4.5V).
  • RDS(ON) ＜ 150mΩ (VGS =-2.5V) +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Junction Temperature Junction and Storage Temperature Range Symbol VDS VGS ID PD TJ Tstg Rating -12 ±8 -.

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SMD Type MOSFET P-Channel Enhancement MOSFET KI001P ■ Features ● VDS (V) =-12V ● ID =-2.8 A ● RDS(ON) ＜ 100mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.5V) +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Junction Temperature Junction and Storage Temperature Range Symbol VDS VGS ID PD TJ Tstg Rating -12 ±8 -2.8 1.2 150 -55 to 150 Unit V A W ℃ 0-0.1 +0.10.38 -0.1 1.Gate 2.Source 3.